Fabrication and Characterization of Porous Silicon for Photonic Applications

  • Arvin I. Mabilangan University of the Philippines Diliman
  • Niel Gabriel E. Saplagio University of the Philippines Diliman
  • Eloise P. Anguluan University of the Philippines Diliman
  • Neil Irvin F. Cabello University of the Philippines Diliman
  • Rhona Olivia M. Gonzales University of the Philippines Diliman
  • Armando S. Somintac University of the Philippines Diliman
  • Arnel A. Salvador University of the Philippines Diliman

Abstract

Porous silicon (PSi) thin films from p-type silicon (100) substrates were fabricated using a simple table top electrochemical etching setup with a 1:1 HF:EtOh electrolyte solution. Porous silicon f ilms with different morphologies and optical properties were achieved by varying the etching parameters, such as HF concentration, etching time and anodization current. It was observed that the f ilm thickness of the fabricated PSi increased with etch time and HF concentration. The etch rate increased with the applied anodization current. Reflection spectroscopy at normal incidence was used to determine the refractive indices of the fabricated f ilms. Using the Sellmeier equation, the chromatic dispersion of the films was obtained for different HF concentrations and anodization currents.

Keywords: Silicon, anodization, porous materials, photonic applications

Issue
Vol 25 No 1 (2013)
Section
Articles
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