Device Fabrication of 60 mm Resonant Cavity Light-Emitting Diode
Abstract
An array of 60-mm-diameter resonant cavity light-emitting diodes suited for coupling with fiber optic were fabricated using standard device fabrication technique. I-V characterization was used to determine the viability of the device fabricating process. Under forward bias, the turn-on voltage of the devices is 1.95–2.45 V with a series resistance of 17–14 kW. Under reverse bias, the devices showed a breakdown voltage of 35 V.
Published
2007-07-02
Issue
Section
Articles
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