Science Diliman, Vol 15, No 1 (2003)

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Growth of GaAs-based VCSEL/RCE Structures for Optoelectronic Applications via Molecular Beam Epitaxy

A. S. Somintac, E. Estacio, M. F. Bailon, A. A. Salvador

Abstract


High intensity and sharp emission peaks, at light-hole (842 nm) and heavy-hole (857 nm) excitonic transitions for a 90 Å GaAs quantum well (QW) were observed for vertical-cavity surface-emitting laser (VCSEL) structure. Excellent wavelength selectivity and sensitivity were demonstrated by resonant cavity enhanced (RCE) photodetector at 859 nm, corresponding to the energy level of a 95 Å GaAs quantum well.

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