Electron Traps in GaAs Grown by Molecular Beam Epitaxy on On-axis (100) and Off-axis Substrates

  • R. Sarmiento
  • A. Somintac
  • L. Guiao
  • F. Agra
  • A. Salvador

Abstract

Deep level transient spectroscopy (DLTS) was used to characterize the electron traps present in the bulk GaAs grown by molecular beam epitaxy (MBE) on on-axis (100) and off-axis (4° towards the (111) A direction) substrates. Two electron traps were obtained for each sample having identical corresponding peak locations in the DLTS spectra. The layer grown on the on-axis substrate has electron traps with activation energies of EC–0.454 eV and EC–0.643 eV and capture cross-sections of 1.205 x 10-14 cm2 and 3.88 x 10-15 cm2, respectively. The layer grown on the off-axis substrate has traps with activation energies of EC–0.454 eV and EC–0.723 eV and capture cross-sections of 2.060 x 10-14 cm2 and 4.40 x 10-14 cm2. The electron traps are possibly the M4 (or EL3) and EL2 (or EB4) traps commonly found in GaAs layers. Due to the high trap concentrations obtained and to the non-uniform trap concentration profile, As desorption may be considerable during growth.
Published
2007-07-16
How to Cite
SARMIENTO, R. et al. Electron Traps in GaAs Grown by Molecular Beam Epitaxy on On-axis (100) and Off-axis Substrates. Science Diliman: A Journal of Pure and Applied Sciences, [S.l.], v. 15, n. 1, july 2007. ISSN 2012-0818. Available at: <https://journals.upd.edu.ph/index.php/sciencediliman/article/view/125>. Date accessed: 20 aug. 2025.
Citation Formats
Issue
Vol 15 No 1 (2003)
Section
Articles
Submission of a manuscript implies: that the work described has not been published before (except in the form of an abstract or as part of a published lecture, review, or thesis); that it is not under consideration for publication elsewhere; that its publication has been approved by all co-authors, if any, as well as by the responsible authorities at the institute where the work has been carried out; that, if and when the manuscript is accepted for publication, the authors agree to the automatic transfer of the copyright to the publisher; that the manuscript will not be published elsewhere in any language without the consent of the copyright holders; that written permission of the copyright holder is obtained by the authors for material used from other copyrighted sources; and that any costs associated with obtaining this permission are the authors’ responsibility.