Time-Resolved Photocurrent Spectroscopy of an LPE-Grown GaAs/AlGaAs Heterojunction Device
Abstract
GaAs-based devices have recently found widespread use in modern telecommunications. Being a direct band gap semiconductor, GaAs-boasts of better efficiency and faster carrier recombination rates than its more popular indirect-gap silicon counterpart (Sze, 1969). GaAs LED’s, lasers, and photodetectors are the common choice used in fiberoptic communications. Discrete components such as high-electron mobility transistors (HEMT) used in satellite communication are now fabricated using GaAs-based devices (Laniog, 2000). The Condensed Matter Physics Laboratory of the National Institute of Physics, UP Diliman has recently been successful in growing a GaAs/AlGaAs pn heterojunction by Liquid Phase Epitaxy (LPE) (Laniog, 2000). In this paper, the authors present results on the study of the optoelecronic characteristics of this device by photocurrent (PC) spectroscopy. Direct pump-and-probe methods were also employed to measure the transient response of the PC signal of the GaAs/AlGaAs pn junction.
Published
2012-07-03
Issue
Section
Articles
Submission of a manuscript implies: that the work described has not been published before (except in the form of an abstract or as part of a published lecture, review, or thesis); that it is not under consideration for publication elsewhere; that its publication has been approved by all co-authors, if any, as well as by the responsible authorities at the institute where the work has been carried out; that, if and when the manuscript is accepted for publication, the authors agree to the automatic transfer of the copyright to the publisher; that the manuscript will not be published elsewhere in any language without the consent of the copyright holders; that written permission of the copyright holder is obtained by the authors for material used from other copyrighted sources; and that any costs associated with obtaining this permission are the authors’ responsibility.