High-Resolution Differential Thermography of Semiconductor Edifices
Abstract
We develop a cost-effective, high-resolution, and noninvasive imaging technique for thermal mapping of semiconductor edifices in integrated circuits. Initial implementation was done using a power-stabilized optical feedback laser system that detects changes in the optical beam-induced current when the package temperature of the device is increased. The linear change in detected current can be translated to a thermal gradient, which can reveal semiconductor “hotspots”—localized sites with anomalous thermal activity. These locales are possible fault sites or areas susceptible to defects, which are the best jump-off points for failure analysis.
Published
2007-07-13
How to Cite
SASTINE, Vera Marie et al.
High-Resolution Differential Thermography of Semiconductor Edifices.
Science Diliman: A Journal of Pure and Applied Sciences, [S.l.], v. 16, n. 2, july 2007.
ISSN 2012-0818.
Available at: <https://journals.upd.edu.ph/index.php/sciencediliman/article/view/107>. Date accessed: 20 july 2025.
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