Observation of the Quantum-Confined Stark Effect in a GaAs/AlGaAs P-I-N Diode by Room Temperature Photocurrent Spectroscopy
Abstract
Room temperature photocurrent spectroscopy is performed on an MBE-grown GaAs/AlGaAs MQW p-i-n device. An observed shift to longer wavelengths is seen with increasing reverse bias voltages. This behavior is explained through a mechanism called the Quantum-Confined Stark Effect. Applied electric fields are estimated using second-order correction for infinite quantum wells. The estimated built-in electric field is 20 kV/cm corresponding to a 9-meV shift from the flatband energy transition. An observed shift to shorter wavelengths is seen under an optically applied field for both biased and unbiased conditions.
Published
2007-07-16
Issue
Section
Articles
Submission of a manuscript implies: that the work described has not been published before (except in the form of an abstract or as part of a published lecture, review, or thesis); that it is not under consideration for publication elsewhere; that its publication has been approved by all co-authors, if any, as well as by the responsible authorities at the institute where the work has been carried out; that, if and when the manuscript is accepted for publication, the authors agree to the automatic transfer of the copyright to the publisher; that the manuscript will not be published elsewhere in any language without the consent of the copyright holders; that written permission of the copyright holder is obtained by the authors for material used from other copyrighted sources; and that any costs associated with obtaining this permission are the authors’ responsibility.
