Observation of the Quantum-Confined Stark Effect in a GaAs/AlGaAs P-I-N Diode by Room Temperature Photocurrent Spectroscopy
Abstract
Room temperature photocurrent spectroscopy is performed on an MBE-grown GaAs/AlGaAs MQW p-i-n device. An observed shift to longer wavelengths is seen with increasing reverse bias voltages. This behavior is explained through a mechanism called the Quantum-Confined Stark Effect. Applied electric fields are estimated using second-order correction for infinite quantum wells. The estimated built-in electric field is 20 kV/cm corresponding to a 9-meV shift from the flatband energy transition. An observed shift to shorter wavelengths is seen under an optically applied field for both biased and unbiased conditions.
Published
2007-07-16
How to Cite
ISON, C. S. et al.
Observation of the Quantum-Confined Stark Effect in a GaAs/AlGaAs P-I-N Diode by Room Temperature Photocurrent Spectroscopy.
Science Diliman: A Journal of Pure and Applied Sciences, [S.l.], v. 15, n. 1, july 2007.
ISSN 2012-0818.
Available at: <https://journals.upd.edu.ph/index.php/sciencediliman/article/view/142>. Date accessed: 19 aug. 2025.
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