Growth of GaAs-based VCSEL/RCE Structures for Optoelectronic Applications via Molecular Beam Epitaxy
Abstract
High intensity and sharp emission peaks, at light-hole (842 nm) and heavy-hole (857 nm) excitonic transitions for a 90 Å GaAs quantum well (QW) were observed for vertical-cavity surface-emitting laser (VCSEL) structure. Excellent wavelength selectivity and sensitivity were demonstrated by resonant cavity enhanced (RCE) photodetector at 859 nm, corresponding to the energy level of a 95 Å GaAs quantum well.
Published
2007-07-16
How to Cite
SOMINTAC, A. S. et al.
Growth of GaAs-based VCSEL/RCE Structures for Optoelectronic Applications via Molecular Beam Epitaxy.
Science Diliman: A Journal of Pure and Applied Sciences, [S.l.], v. 15, n. 1, july 2007.
ISSN 2012-0818.
Available at: <https://journals.upd.edu.ph/index.php/sciencediliman/article/view/124>. Date accessed: 05 aug. 2025.
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