Electrical and Optical Characterization of AlxGa1-xAs/GaAs P-n Junctions Grown via Liquid Phase Epitaxy

J. N. Laniog, K. M. A. N. Bautista, M. G. Patricio, R. V. Sarmago, A. A. Salvador



The AlxGa1-xAs/GaAs heterostructure system is of prime importance for use in high-speed digital and electro-optic device applications. The compositional dependence of the bandgap energy of AlxGa1-xAs can be tailored to meet specific device requirements such as photon emission and detection. The 0.15% lattice parameter difference between GaAs and AlxGa1-xAs (0≤x≤0) at 300 K ensures that the density of interface states is kept to a level that would not affect device performance. These two properties of AlxGa1-xAs/GaAs alloy system make it one of the most technologically important semiconductors to date (Adachi, 1985).

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