Silicon Nitride (SiNxHy) by Plasma-Enhanced Chemical Vapor Deposition

R. L. Manay, V. Y. Abellana, R. V. Sarmago



In the microelectronics industry, silicon nitride is greatly employed as an encapsulant for silicon integrated circuits, as a diffusion barrier for water and sodium, as passivation and gate dielectric material and as local oxidation masks in integrated circuit processing. Accordingly, the number of thin film fabrication techniques are extensive: direct thermal nitridation, ion-beam enhanced deposition, ion plating, hot filament-enhanced CVD, self-propagating high temperature synthesis, laser ablation and plasma-enhanced chemical vapor deposition (PECVD).

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